Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

Thermally induced growth of graphene on the two polar surfaces of $6H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$ is investigated with emphasis on the initial stages of growth and interface structure. The experimental methods employed are angle-resolved valence band photoelectron spectroscopy, soft x-ray induced core-level spectroscopy, and low-energy electron diffraction. On the Si-terminated (0001) surface, the $(6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3})R30\ifmmode^\circ\else\textdegree\fi{}$ reconstruction is the precursor of the growth of graphene and it persists at the interface upon the growth of few layer graphene (FLG). The…