articleJournal of Applied PhysicsOct 1, 2009Closed access

Defects in ZnO

Washington State University

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Abstract

Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission in this material could be harnessed in solid-state white lighting devices. The problem of defects, in particular, acceptor dopants, remains a key challenge. In this review, defects in ZnO are discussed, with an emphasis on the physical properties of point defects in bulk crystals. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. However, experiments and theory have shown that O vacancies are deep donors, while Zn interstitials are too mobile to be stable at room temperature. Group-III (B, Al,…

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1,110
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34.10
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100%
References
248
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Authors

2

Topics & keywords

Keywords
  • Materials science
  • Dopant
  • Crystallographic defect
  • Impurity
  • Doping
  • Spintronics
  • Band gap
  • Semiconductor
UN Sustainable Development Goals
  • Affordable and clean energy
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