Defects in ZnO
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Abstract
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission in this material could be harnessed in solid-state white lighting devices. The problem of defects, in particular, acceptor dopants, remains a key challenge. In this review, defects in ZnO are discussed, with an emphasis on the physical properties of point defects in bulk crystals. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. However, experiments and theory have shown that O vacancies are deep donors, while Zn interstitials are too mobile to be stable at room temperature. Group-III (B, Al,…
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1,110
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- FWCI
- 34.10
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- 100%
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Authors
2Topics & keywords
Topics
Keywords
- Materials science
- Dopant
- Crystallographic defect
- Impurity
- Doping
- Spintronics
- Band gap
- Semiconductor
UN Sustainable Development Goals
- Affordable and clean energy
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