Gate Insulators in Organic Field-Effect Transistors
Hexagon (United Kingdom) · Philips (Netherlands)
Abstract
In this paper, we review recent progress in the understanding of insulator/semiconductor interfaces in organic field-effect transistors (OFETs). We would like to emphasize that the choice of gate insulator is as important for high-quality OFET devices as the semiconductor itself, especially because of the unique transport mechanisms operating in them. To date researchers have explored numerous organic and inorganic insulator materials, some of them designed to improve the morphology of the organic semiconductor (OSC). Surface treatments, particularly on inorganic insulators, have been shown to influence significantly molecular ordering and device performance. In addition, the deposition technique used for the…
Citation impact
- FWCI
- 39.30
- Percentile
- 100%
- References
- 58
Authors
4Topics & keywords
- Organic semiconductor
- Materials science
- Semiconductor
- Organic field-effect transistor
- Dielectric
- Insulator (electricity)
- Field-effect transistor
- Nanotechnology