articleNano LettersMay 16, 2011GREEN OA

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

ASAlexander S. MayorovRVRoman V. GorbachevSVSergey V. MorozovLBLiam BritnellRJRashid Jalil

University of Manchester · Institute of Microelectronics Technology and High Purity Materials · +1 more institution

Indexed inarxivcrossref

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

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Authors

11
  • AS
    Alexander S. MayorovCorresponding

    University of Manchester

  • RV
    Roman V. Gorbachev

    University of Manchester

  • SV
    Sergey V. Morozov

    Institute of Microelectronics Technology and High Purity Materials, University of Manchester

  • LB
    Liam Britnell

    University of Manchester

  • RJ
    Rashid Jalil

    University of Manchester

Topics & keywords

Topics
Keywords
  • Graphene
  • Hexagonal boron nitride
  • Ballistic conduction
  • Boron nitride
  • Fabrication
  • Graphene nanoribbons
  • Micrometer
  • Bilayer graphene
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