Dual-Gated MoS 2 /WSe 2 van der Waals Tunnel Diodes and Transistors
University of California, Berkeley · Lawrence Berkeley National Laboratory · +3 more institutions
Abstract
Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias…
Citation impact
- FWCI
- 30.89
- Percentile
- 100%
- References
- 26
Authors
10- TRTania RoyCorresponding
University of California, Berkeley, Lawrence Berkeley National Laboratory
- MTMahmut Tosun
University of California, Berkeley, Lawrence Berkeley National Laboratory
- XCXi Cao
University of Florida
- HFHui Fang
University of California, Berkeley, Lawrence Berkeley National Laboratory
- DLDer‐Hsien Lien
University of California, Berkeley, National Taiwan University, Lawrence Berkeley National Laboratory
Topics & keywords
- Quantum tunnelling
- Materials science
- Optoelectronics
- Diode
- Heterojunction
- van der Waals force
- Transistor
- Semiconductor