Thin‐film silicon solar cell technology

Abstract This paper describes the use, within p – i – n ‐ and n – i – p ‐type solar cells, of hydrogenated amorphous silicon (a‐Si:H) and hydrogenated microcrystalline silicon (μc‐Si:H) thin films (layers), both deposited at low temperatures (200°C) by plasma‐assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i ‐layers are described. These properties are linked to the microstructure and hence to the i ‐layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the…