Ferroelectricity in yttrium-doped hafnium oxide
Fraunhofer Institute for Photonic Microsystems · NaMLab (Germany) · +4 more institutions
Abstract
Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO1.5 in HfO2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO1.5 admixture the remanent polarization peaked at 24 μC/cm2 with a coercive field of about 1.2 MV/cm. Considering the availability of conformal…
Citation impact
- FWCI
- 11.08
- Percentile
- 100%
- References
- 33
Authors
11Topics & keywords
- Ferroelectricity
- Materials science
- Yttrium
- Orthorhombic crystal system
- Dielectric
- Coercivity
- Doping
- Thin film