Phase change memory technology

GWGeoffrey W. BurrMJMatthew J. BreitwischMFMichele FranceschiniDGDavide GarettoKGKailash Gopalakrishnan

IBM Research - Thomas J. Watson Research Center · IBM Research - Almaden

Indexed inarxivcrossref

Abstract

The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance, and yield characteristics. They introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the…

Citation impact

887
total citations
FWCI
25.41
Percentile
100%
References
149
Citations per year

Authors

13
  • GW
    Geoffrey W. BurrCorresponding
  • MJ
    Matthew J. Breitwisch
  • MF
    Michele Franceschini

    IBM Research - Thomas J. Watson Research Center

  • DG
    Davide Garetto

    IBM Research - Almaden

  • KG
    Kailash Gopalakrishnan

    IBM Research - Almaden

Topics & keywords

Keywords
  • Phase-change memory
  • Resistive random-access memory
  • Non-volatile memory
  • Scalability
  • Reset (finance)
  • Fabrication
  • Phase change
  • Phase-change material
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