Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
Institute of Microelectronics Technology and High Purity Materials · University of Manchester · +2 more institutions
Indexed inarxivcrossrefpubmed
Abstract
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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7Topics & keywords
Topics
Keywords
- Graphene
- Condensed matter physics
- Bilayer graphene
- Materials science
- Scattering
- Phonon
- Electron
- Charge carrier
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