Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures
Rutgers, The State University of New Jersey · University of Geneva · +1 more institution
Abstract
Ferroelectric oxide materials have offered a tantalizing potential for applications since the discovery of ferroelectric perovskites more than 50 years ago. Their switchable electric polarization is ideal for use in devices for memory storage and integrated microelectronics, but progress has long been hampered by difficulties in materials processing. Recent breakthroughs in the synthesis of complex oxides have brought the field to an entirely new level, in which complex artificial oxide structures can be realized with an atomic-level precision comparable to that well known for semiconductor heterostructures. Not only can the necessary high-quality ferroelectric films now be grown for new device capabilities,…
Citation impact
- FWCI
- 30.95
- Percentile
- 100%
- References
- 63
Authors
3- CACharles AhnCorresponding
Rutgers, The State University of New Jersey, University of Geneva, Yale University
- KMKarin M. Rabe
Rutgers, The State University of New Jersey, University of Geneva, Yale University
- JTJean‐Marc Triscone
Rutgers, The State University of New Jersey, University of Geneva, Yale University
Topics & keywords
- Ferroelectricity
- Microelectronics
- Heterojunction
- Nanoscopic scale
- Nanotechnology
- Materials science
- Oxide
- Semiconductor