Gate-Variable Optical Transitions in Graphene
Lawrence Berkeley National Laboratory · University of California, Berkeley
Abstract
Two-dimensional graphene monolayers and bilayers exhibit fascinating electrical transport behaviors. Using infrared spectroscopy, we find that they also have strong interband transitions and that their optical transitions can be substantially modified through electrical gating, much like electrical transport in field-effect transistors. This gate dependence of interband transitions adds a valuable dimension for optically probing graphene band structure. For a graphene monolayer, it yields directly the linear band dispersion of Dirac fermions, whereas in a bilayer, it reveals a dominating van Hove singularity arising from interlayer coupling. The strong and layer-dependent optical transitions of graphene and…
Citation impact
- FWCI
- 33.79
- Percentile
- 100%
- References
- 20
Authors
7- FWFeng WangCorresponding
Lawrence Berkeley National Laboratory, University of California, Berkeley
- YZYuanbo Zhang
Lawrence Berkeley National Laboratory, University of California, Berkeley
- CTChuanshan Tian
Lawrence Berkeley National Laboratory, University of California, Berkeley
- ÇGÇağlar Girit
Lawrence Berkeley National Laboratory, University of California, Berkeley
- AZAlex Zettl
Lawrence Berkeley National Laboratory, University of California, Berkeley
Topics & keywords
- Graphene
- Van Hove singularity
- Bilayer graphene
- Monolayer
- Dirac fermion
- Materials science
- Condensed matter physics
- Gating