articleNano LettersMar 20, 2013GREEN OA

Electroluminescence in Single Layer MoS 2

RSR. S. SundaramMEM. EngelALA. LombardoRKR. KrupkeACA. C. Ferrari

University of Cambridge · Karlsruhe Institute of Technology · +3 more institutions

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Indexed inarxivcrossrefpubmed

Abstract

We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.

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Authors

7
  • RS
    R. S. SundaramCorresponding

    University of Cambridge

  • ME
    M. Engel

    Karlsruhe Institute of Technology, Institute of Nanotechnology

  • AL
    A. Lombardo

    University of Cambridge

  • RK
    R. Krupke

    Technical University of Darmstadt, Institute of Nanotechnology, Karlsruhe Institute of Technology

  • AC
    A. C. Ferrari

    University of Cambridge

Topics & keywords

Topics
Keywords
  • Electroluminescence
  • Layer (electronics)
  • Electroluminescent display
  • Molybdenum disulfide
  • Excited state
  • Transistor
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