articlePhysical Review LettersOct 30, 2002ITClosed access

Giant Dielectric Permittivity Observed in Li and Ti Doped NiO

Tsinghua University

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Abstract

A giant low-frequency dielectric constant (${ϵ}_{o}\ensuremath{\sim}{10}^{5}$) near room temperature was observed in Li,Ti co-doped NiO ceramics. Unlike currently best-known high ${ϵ}_{o}$ ferroelectric-related materials, the doped oxide is a nonperovskite, lead-free, and nonferroelectric material. It is suggested that the giant dielectric constant response of the doped NiO could be enhanced by a grain boundary-layer mechanism as found in boundary-layer capacitors. In addition, there is about a one-hundred-fold drop in the dielectric constant at low temperature. This anomaly is attributed to a thermally excited relaxation process rather than a thermally driven phase transition, as for that yielding…

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Authors

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Topics & keywords

Keywords
  • Materials science
  • Dielectric
  • Non-blocking I/O
  • Permittivity
  • Doping
  • Grain boundary
  • Ferroelectricity
  • Condensed matter physics
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