articleNano LettersJan 19, 2002Closed access

Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires

Lawrence Berkeley National Laboratory

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Abstract

Heterojunction and superlattice formation is essential for many potential applications of semiconductor nanowires in nanoscale optoelectronics. We have developed a hybrid pulsed laser ablation/chemical capor deposition (PLA-CVD) process for the synthesis of semiconductor nanowires with longitudinal ordered heterostructures. The laser ablation process generates a programmable pulsed vapor source, which enables the nanowire growth in a block-by-block fashion with a well-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice structure have been successfully synthesized. This unique class of heterostructured one-dimensional nanostructures holds great…

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Topics & keywords

Keywords
  • Nanowire
  • Materials science
  • Heterojunction
  • Superlattice
  • Optoelectronics
  • Chemical vapor deposition
  • Semiconductor
  • Nanostructure
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