Few-Layer MoS 2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
National Taiwan University · Institute of Atomic and Molecular Sciences, Academia Sinica · +1 more institution
Abstract
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics…
Citation impact
- FWCI
- 27.32
- Percentile
- 100%
- References
- 58
Authors
8Topics & keywords
- Broadband
- Materials science
- Layer (electronics)
- Optoelectronics
- Optical switch
- Nanotechnology
- Telecommunications
- Computer science