Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Nanjing University · Collaborative Innovation Center of Advanced Microstructures · +2 more institutions
Indexed inarxivcrossrefdoajpubmed
Abstract
No abstract available for this paper.
Citation impact
696
total citations
- FWCI
- 24.30
- Percentile
- 100%
- References
- 50
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Authors
15Topics & keywords
Topics
Keywords
- Molybdenum disulfide
- Monolayer
- Transistor
- Materials science
- Molybdenum
- Impurity
- Semiconductor
- Chemical physics
UN Sustainable Development Goals
- Affordable and clean energy
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Funding
- NNNational Natural Science Foundation of ChinaAwards: 21173040, 61325020, 61261160499, 21373045, 2010CB923401, 113279028, 61274114, 11274154, 2011ZX02707, 2011CB302004, 61229401
- GOGovernment of Jiangsu Province
- NSNatural Science Foundation of Jiangsu ProvinceAwards: BK2012302, BK20130055, BK2012024, BK20130016
- PAPriority Academic Program Development of Jiangsu Higher Education Institutions
- NSNational Science and Technology Major ProjectAward: 2011ZX02707
- SRSpecialized Research Fund for the Doctoral Program of Higher Education of China
- NSNational Supercomputing Center of Tianjin
- NSNational Supercomputing Center, Korea Institute of Science and Technology Information