Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
Seoul National University · Korea Institute of Science and Technology
Abstract
This review article summarized the recent understanding of resistance switching (RS) behavior in several binary oxide thin film systems. Among the various RS materials and mechanisms, TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with. To facilitate the discussions, the RS was divided into three parts; electroforming, set and reset steps. After short discussions on the electrochemistry of 'electrolytic' oxide materials, the general and peculiar aspects of these RS systems and mechanism are elaborated. Although the RS behaviors and characteristics of these materials are primarily dependent on the repeated formation and rupture of the conducting filaments (CFs) at the…
Citation impact
- FWCI
- 48.91
- Percentile
- 100%
- References
- 135
Authors
3Topics & keywords
- Electroforming
- Materials science
- Reset (finance)
- Oxide
- Resistive random-access memory
- Nanotechnology
- Thin film
- Mechanism (biology)
- Affordable and clean energy