reviewNanotechnologyMay 16, 2011Closed access

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

Seoul National University · Korea Institute of Science and Technology

PubMed
Indexed incrossrefpubmed

Abstract

This review article summarized the recent understanding of resistance switching (RS) behavior in several binary oxide thin film systems. Among the various RS materials and mechanisms, TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with. To facilitate the discussions, the RS was divided into three parts; electroforming, set and reset steps. After short discussions on the electrochemistry of 'electrolytic' oxide materials, the general and peculiar aspects of these RS systems and mechanism are elaborated. Although the RS behaviors and characteristics of these materials are primarily dependent on the repeated formation and rupture of the conducting filaments (CFs) at the…

Citation impact

627
total citations
FWCI
48.91
Percentile
100%
References
135
Citations per year

Authors

3

Topics & keywords

Keywords
  • Electroforming
  • Materials science
  • Reset (finance)
  • Oxide
  • Resistive random-access memory
  • Nanotechnology
  • Thin film
  • Mechanism (biology)
UN Sustainable Development Goals
  • Affordable and clean energy
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