Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in thin-film transistors (TFTs) for large-area and/or flexible flat-panel displays and other giant-microelectronics devices. So far, many prototype displays have been demonstrated in these four years since the first report of AOS TFT. The most prominent feature of AOS TFTs is that they operate with good performances even if they are fabricated at low temperatures without a defect passivation treatment. The TFT mobilities exceed 10 cm 2 /(V ldr s), which are more than ten times larger than those of conventional amorphous semiconductor devices. In addition, they operate at low voltages, e.g.,