Growth of Large-Area and Highly Crystalline MoS 2 Thin Layers on Insulating Substrates
Institute of Atomic and Molecular Sciences, Academia Sinica · Institute of Physics, Academia Sinica · +4 more institutions
Abstract
The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS(2) sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the…
Citation impact
- FWCI
- 77.76
- Percentile
- 100%
- References
- 41
Authors
12- KLKeng-Ku LiuCorresponding
Institute of Atomic and Molecular Sciences, Academia Sinica
- WZWenjing Zhang
Institute of Atomic and Molecular Sciences, Academia Sinica
- YLYi-Hsien Lee
Institute of Atomic and Molecular Sciences, Academia Sinica
- YLYu-Chuan Lin
Institute of Atomic and Molecular Sciences, Academia Sinica
- MCMu-Tung Chang
Institute of Physics, Academia Sinica
Topics & keywords
- Molybdenum disulfide
- Stacking
- Thin film
- Layer (electronics)
- Molybdenum
- Annealing (glass)
- Atomic layer deposition
- Transistor