articleNano LettersFeb 27, 2012GREEN OA

Growth of Large-Area and Highly Crystalline MoS 2 Thin Layers on Insulating Substrates

KLKeng-Ku LiuWZWenjing ZhangYLYi-Hsien LeeYLYu-Chuan LinMCMu-Tung Chang

Institute of Atomic and Molecular Sciences, Academia Sinica · Institute of Physics, Academia Sinica · +4 more institutions

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Indexed inarxivcrossrefpubmed

Abstract

The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS(2) sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the…

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Authors

12
  • KL
    Keng-Ku LiuCorresponding

    Institute of Atomic and Molecular Sciences, Academia Sinica

  • WZ
    Wenjing Zhang

    Institute of Atomic and Molecular Sciences, Academia Sinica

  • YL
    Yi-Hsien Lee

    Institute of Atomic and Molecular Sciences, Academia Sinica

  • YL
    Yu-Chuan Lin

    Institute of Atomic and Molecular Sciences, Academia Sinica

  • MC
    Mu-Tung Chang

    Institute of Physics, Academia Sinica

Topics & keywords

Keywords
  • Molybdenum disulfide
  • Stacking
  • Thin film
  • Layer (electronics)
  • Molybdenum
  • Annealing (glass)
  • Atomic layer deposition
  • Transistor
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