A Graphene Field-Effect Device

Lemme, Max C.; Echtermeyer, T. J.; Baus, M.; Kurz, H.

doi:10.1109/led.2007.891668

articleIEEE Electron Device LettersApr 1, 2007GREEN OA

A Graphene Field-Effect Device

MCMax C. Lemme TJT. J. Echtermeyer MBM. Baus HKH. Kurz

RWTH Aachen University

Indexed inarxivcrossref

Abstract

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs

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Topics & keywords

Topics

Keywords

Graphene
Materials science
Silicon
Optoelectronics
Graphene nanoribbons
Electron mobility
Monolayer
Silicon on insulator

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