articleIEEE Transactions on Nuclear ScienceJun 1, 2003GREEN OA

Total ionizing dose effects in MOS oxides and devices

TRTimothy R. OldhamFBF. B. McLean

Goddard Space Flight Center · Office of Ocean Exploration and Research

Indexed incrossref

Abstract

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.

Citation impact

924
total citations
FWCI
6.38
Percentile
100%
References
155
Citations per year

Authors

2

Topics & keywords

Topics
Keywords
  • Ionizing radiation
  • Trapping
  • Materials science
  • Optoelectronics
  • Absorbed dose
  • Irradiation
  • Radiation
  • MOSFET
UN Sustainable Development Goals
  • Clean water and sanitation
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