Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1
Hangzhou Xixi hospital · State Key Laboratory of Silicon Materials · +2 more institutions
Abstract
High performance p-type half-Heusler compounds FeNb1−xTixSb are developed via a band engineering approach and a record zT of 1.1 is achieved.
Citation impact
- FWCI
- 15.29
- Percentile
- 100%
- References
- 33
Authors
5- CFChenguang Fu
Hangzhou Xixi hospital, State Key Laboratory of Silicon Materials, Zhejiang University, Silicon Labs (United States)
- TZTiejun ZhuCorresponding
Hangzhou Xixi hospital, State Key Laboratory of Silicon Materials, Zhejiang University, Silicon Labs (United States)
- YLYintu Liu
Hangzhou Xixi hospital, State Key Laboratory of Silicon Materials, Zhejiang University, Silicon Labs (United States)
- HXHanhui Xie
Hangzhou Xixi hospital, State Key Laboratory of Silicon Materials, Zhejiang University, Silicon Labs (United States)
- XZXinbing Zhao
Hangzhou Xixi hospital, State Key Laboratory of Silicon Materials, Zhejiang University, Silicon Labs (United States)
Topics & keywords
- Figure of merit
- Materials science
- Thermoelectric effect
- Thermoelectric materials
- Optoelectronics
- Physics
- Quantum mechanics