Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
Institute of Semiconductors · University of California, Berkeley · +3 more institutions
Abstract
Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in…
Citation impact
- FWCI
- 30.69
- Percentile
- 100%
- References
- 29
Authors
14- STSefaattin TongayCorresponding
Institute of Semiconductors, University of California, Berkeley
- JSJoonki Suh
Chinese Academy of Sciences, Institute of Semiconductors, University of California, Berkeley
- CACan Ataca
Massachusetts Institute of Technology
- WFWen Fan
University of California, Berkeley
- ALAlexander Luce
Lawrence Berkeley National Laboratory, University of California, Berkeley
Topics & keywords
- Semiconductor
- Photoluminescence
- Exciton
- Materials science
- Condensed matter physics
- Charge carrier
- Annealing (glass)
- Band gap
Funding
- UDU.S. Department of EnergyAwards: -AC02-05CH11231, Contract No. DE-AC02-05CH11231, 05CH11231, No. DE-AC02-05CH11231, AC02-05CH11231, DE-AC02, DE-AC02-05CH11231, DE-AC02-
- OOOffice of ScienceAwards: AC02-05CH11231, -AC02-05CH11231, DE-AC02, No. DE-AC02-05CH11231, Contract No. DE-AC02-05CH11231
- BEBasic Energy SciencesAwards: DE-AC02, AC02-05CH11231, Contract No. DE-AC02-05CH11231, DE-AC02-05CH11231, No. DE-AC02-05CH11231, -AC02-05CH11231