Controlling the Electronic Structure of Bilayer Graphene
Lawrence Berkeley National Laboratory · Friedrich-Alexander-Universität Erlangen-Nürnberg · +1 more institution
Abstract
We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.
Citation impact
- FWCI
- 94.14
- Percentile
- 100%
- References
- 22
Authors
5- TOTaisuke OhtaCorresponding
Lawrence Berkeley National Laboratory, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fritz Haber Institute of the Max Planck Society
- ABAaron BostwickCorresponding
Lawrence Berkeley National Laboratory, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fritz Haber Institute of the Max Planck Society
- TSThomas Seyller
Lawrence Berkeley National Laboratory, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fritz Haber Institute of the Max Planck Society
- KHK. Horn
Lawrence Berkeley National Laboratory, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fritz Haber Institute of the Max Planck Society
- EREli RotenbergCorresponding
Lawrence Berkeley National Laboratory, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fritz Haber Institute of the Max Planck Society
Topics & keywords
- Bilayer graphene
- Graphene
- Bilayer
- Materials science
- Electronic structure
- Band gap
- Silicon carbide
- Condensed matter physics