articleIEEE Transactions on Nuclear ScienceJun 1, 2003Closed access

Review of displacement damage effects in silicon devices

Northrop Grumman (United States) · Goddard Space Flight Center

Indexed incrossref

Abstract

This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach…

Citation impact

748
total citations
FWCI
15.94
Percentile
100%
References
198
Citations per year

Authors

3

Topics & keywords

Keywords
  • Displacement (psychology)
  • Terminology
  • Semiconductor device
  • Computer science
  • Silicon
  • Frame (networking)
  • Key (lock)
  • Radiation damage
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