Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect
Tohoku University · Spintronics Research Network of Japan · +8 more institutions
Abstract
We report anisotropic magnetoresistance in $\mathrm{Pt}|{\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ bilayers. In spite of ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it ``spin Hall magnetoresistance.''
Citation impact
- FWCI
- 51.04
- Percentile
- 100%
- References
- 41
Authors
14- HNHiroyasu NakayamaCorresponding
Tohoku University, Spintronics Research Network of Japan
- MAMatthias Althammer
Bavarian Academy of Sciences and Humanities, University of Alabama
- YCY.-T. Chen
Delft University of Technology
- KUKen‐ichi Uchida
Tohoku University, Japan Science and Technology Agency
- YKY. Kajiwara
Tohoku University
Topics & keywords
- Magnetoresistance
- Condensed matter physics
- Magnetization
- Spin (aerodynamics)
- Physics
- Anisotropy
- Hall effect
- Materials science