Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Fraunhofer Institute for Solar Energy Systems · Soitec (France) · +6 more institutions
Abstract
ABSTRACT Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four‐junction solar cell architectures with optimum bandgap combination are found for lattice‐mismatched III–V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent,…
Citation impact
- FWCI
- 58.33
- Percentile
- 100%
- References
- 22
Authors
23- FDFrank DimrothCorresponding
Fraunhofer Institute for Solar Energy Systems
- MGM. Grave
Fraunhofer Institute for Solar Energy Systems
- PBPaul Beutel
Fraunhofer Institute for Solar Energy Systems
- UFUlrich Fiedeler
Fraunhofer Institute for Solar Energy Systems
- CKChristian Karcher
Fraunhofer Institute for Solar Energy Systems
Topics & keywords
- Optoelectronics
- Band gap
- Solar cell
- Materials science
- Triple junction
- Wafer
- Semiconductor
- Tandem
- Affordable and clean energy