Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
Sungkyunkwan University · Samsung (South Korea) · +2 more institutions
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Abstract
No abstract available for this paper.
Citation impact
759
total citations
- FWCI
- 32.22
- Percentile
- 100%
- References
- 47
Citations per year
Authors
8- MSMin Sup ChoiCorresponding
Sungkyunkwan University, Samsung (South Korea)
- GLGwan‐Hyoung Lee
Columbia University, Sungkyunkwan University, Samsung (South Korea)
- YYYoung‐Jun Yu
Electronics and Telecommunications Research Institute, Columbia University
- DLDae-Yeong Lee
Sungkyunkwan University, Samsung (South Korea)
- SHSeung Hwan Lee
Sungkyunkwan University, Samsung (South Korea)
Topics & keywords
Topics
Keywords
- Materials science
- Graphene
- Optoelectronics
- Stacking
- Molybdenum disulfide
- Transistor
- Hysteresis
- Trapping
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