Abstract
We evaluate the potential of carbon nanotubes (CNTs) as the basis for a new nanoelectronic technology. After briefly reviewing the electronic structure and transport properties of CNTs, we discuss the fabrication of CNT field-effect transistors (CNTFETs) formed from individual single-walled nanotubes (SWCNTs), SWCNT bundles, or multiwalled (MW) CNTs. The performance characteristics of the CNTFETs are discussed and compared to those of corresponding silicon devices. We show that CNTFETs are very competitive with state-of-the-art conventional devices. We also discuss the switching mechanism of CNTFETs and show that it involves the modulation by the gate field of Schottky barriers at the metal-CNT junctions. This…
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650
total citations
- FWCI
- 24.72
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- 100%
- References
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Authors
4Topics & keywords
Topics
Keywords
- Carbon nanotube
- Electronics
- Nanotechnology
- Nanotube
- Materials science
- Engineering
- Electrical engineering
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