Demonstration of a silicon Raman laser
University of California, Los Angeles
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Abstract
We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.
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2Topics & keywords
Topics
Keywords
- Materials science
- Optics
- Laser
- Raman spectroscopy
- Silicon
- Raman amplification
- Raman laser
- Optoelectronics
UN Sustainable Development Goals
- Affordable and clean energy
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