Role of domain walls in the abnormal photovoltaic effect in BiFeO3
Max Planck Institute of Microstructure Physics · Leibniz University Hannover · +2 more institutions
Abstract
Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (Voc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, Voc as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.…
Citation impact
- FWCI
- 12.04
- Percentile
- 100%
- References
- 29
Authors
5- ABAkash Bhatnagar
Max Planck Institute of Microstructure Physics
- ARAyan Roy Chaudhuri
Leibniz University Hannover
- YHYoung Heon Kim
Korea Research Institute of Standards and Science
- DHDietrich Hesse
Max Planck Institute of Microstructure Physics
- MAMarin AlexeCorresponding
Max Planck Institute of Microstructure Physics, University of Warwick
Topics & keywords
- Bismuth ferrite
- Photovoltaic system
- Materials science
- Conductivity
- Band gap
- Photovoltaic effect
- Photoconductivity
- Anomalous photovoltaic effect
- Affordable and clean energy