Ultrasensitive and Broadband MoS 2 Photodetector Driven by Ferroelectrics
Shanghai Institute of Technical Physics · Xiangtan University · +3 more institutions
Abstract
A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 1012 Jones and 2570 A W−1, respectively, at 635 nm with ZERO gate bias. Eg of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85–1.55 μm). As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information…
Citation impact
- FWCI
- 29.90
- Percentile
- 100%
- References
- 63
Authors
18- XWXudong Wang
Shanghai Institute of Technical Physics, Xiangtan University
- PWPeng Wang
Shanghai Institute of Technical Physics
- JWJianlu WangCorresponding
Shanghai Institute of Technical Physics
- WHWeida HuCorresponding
Shanghai Institute of Technical Physics
- XZXiaohao Zhou
Shanghai Institute of Technical Physics
Topics & keywords
- Photodetector
- Materials science
- Ferroelectricity
- Optoelectronics
- Specific detectivity
- Broadband
- Polarization (electrochemistry)
- Fluoride
- Affordable and clean energy