Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS 2
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Abstract
The effect of strain on the phonon modes of monolayer and few-layer MoS${}_{2}$ has been investigated by observing the strain-induced shifts of the Raman-active modes. Uniaxial strain was applied to a sample of thin-layer MoS${}_{2}$ sandwiched between two layers of optically transparent polymer. The resulting band shifts of the ${E}_{2g}^{1}$ ($\ensuremath{\sim}$$385.3\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$) and ${A}_{1g}$ ($\ensuremath{\sim}$$402.4\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$) Raman modes were found to be small but observable. First-principles plane-wave calculations based on density functional perturbation theory were used to determine the Gr\"uneisen…
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8Topics & keywords
Topics
Keywords
- Monolayer
- Phonon
- Raman spectroscopy
- Raman scattering
- Materials science
- Condensed matter physics
- Strain (injury)
- Physics
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