Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x Cl x Perovskite for Resistive Random Access Memory Devices

The CH3NH3PbI3−xClx organic–inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3NH3PbI3−xClx/FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed…