Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
Centre National pour la Recherche Scientifique et Technique (CNRST) · Institut de Science et d'Ingénierie Supramoléculaires · +3 more institutions
Abstract
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of…
Citation impact
- FWCI
- 19.09
- Percentile
- 100%
- References
- 324
Authors
4- SLSonglin LiCorresponding
Centre National pour la Recherche Scientifique et Technique (CNRST), Institut de Science et d'Ingénierie Supramoléculaires, Fondation Jean-Marie Lehn, Université de Strasbourg
- KTKazuhito Tsukagoshi
National Institute for Materials Science
- EOEmanuele OrgiuCorresponding
Centre National pour la Recherche Scientifique et Technique (CNRST), Institut de Science et d'Ingénierie Supramoléculaires, Fondation Jean-Marie Lehn, Université de Strasbourg
- PSPaolo Samorı́Corresponding
Centre National pour la Recherche Scientifique et Technique (CNRST), Institut de Science et d'Ingénierie Supramoléculaires, Fondation Jean-Marie Lehn, Université de Strasbourg
Topics & keywords
- Semiconductor
- Electronics
- Chalcogenide
- Electron mobility
- van der Waals force
- Materials science
- Nanotechnology
- Charge carrier