Hexagonal boron nitride is an indirect bandgap semiconductor
Centre National de la Recherche Scientifique · Université de Montpellier · +1 more institution
Indexed inarxivcrossref
Abstract
No abstract available for this paper.
Citation impact
1,342
total citations
- FWCI
- 52.82
- Percentile
- 100%
- References
- 47
Citations per year
Authors
3- GCGuillaume CassaboisCorresponding
Centre National de la Recherche Scientifique, Université de Montpellier, Laboratoire Charles Coulomb
- PVPierre Valvin
Laboratoire Charles Coulomb, Université de Montpellier, Centre National de la Recherche Scientifique
- BGBernard Gil
Université de Montpellier, Laboratoire Charles Coulomb, Centre National de la Recherche Scientifique
Topics & keywords
Topics
Keywords
- Band gap
- Materials science
- Semiconductor
- Exciton
- Wide-bandgap semiconductor
- Optoelectronics
- Spectroscopy
- Graphene
UN Sustainable Development Goals
- Affordable and clean energy
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