Highly Sensitive, Encapsulated MoS 2 Photodetector with Gate Controllable Gain and Speed
Institute of Photonic Sciences
Indexed incrossrefpubmed
Abstract
Semiconducting, two-dimensional molybdenum disulfide (MoS2) is considered a promising new material for highly sensitive photodetection, because of its atomically thin profile and favorable bandgap. However, reported photodetectors to date show strong variation in performance due to the detrimental and uncontrollable effects of environmental adsorbates on devices due to large surface to volume ratio. Here, we report on highly stable and high-performance monolayer and bilayer MoS2 photodetectors encapsulated with atomic layer deposited hafnium oxide. The protected devices show enhanced electronic properties by isolating them from the ambience as strong n-type doping, vanishing hysteresis, and reduced device…
Citation impact
645
total citations
- FWCI
- 21.48
- Percentile
- 100%
- References
- 50
Citations per year
Authors
2Topics & keywords
Topics
Keywords
- Photodetector
- Optoelectronics
- Materials science
- Nanotechnology
No related works found for this paper.