Thin-Film Preparation and Characterization of Cs 3 Sb 2 I 9 : A Lead-Free Layered Perovskite Semiconductor

In this study, computational, thin-film deposition and characterization approaches have been used to examine the ternary halide semiconductor Cs3Sb2I9. Cs3Sb2I9 has two known structural modifications, the 0-D dimer form (space group P63/mmc, No. 194) and the 2-D layered form (P$\bar{3}$m1, No. 164), which can be prepared via solution and solid state or gas phase reactions, respectively. Our computational investigations suggest that the layered form, which is a one-third Sb-deficient derivative of the ubiquitous perovskite structure, is a potential candidate for high-band-gap photovoltaic (PV) applications. In this work, we describe details of a two-step deposition approach that enables the preparation of large…

• OO
  Office of Energy Efficiency and Renewable Energy

  Award: DE-EE0006712