Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier…

• NS
  National Science Foundation

  Awards: BK21-Plus, 1231319
• NR
  National Research Foundation
• MO
  Ministry of Science, ICT and Future Planning

  Awards: IBS-R011-D1, 2015R1C1A1A02037083
• KI
  Korea Institute of Science and Technology
• NR
  National Research Foundation of Korea

  Awards: IBS-R011-D1, 2015R1C1A1A02037083
• IF
  Institute for Basic Science

  Awards: IBS-R011-D1, R011-D1
• DO
  Division of Materials Research

  Awards: 1231319, DMR-1231319