Near-Infrared Photodetector Based on MoS 2 /Black Phosphorus Heterojunction

Two-dimensional (2D) materials present their excellent properties in electronic and optoelectronic applications, including in ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, flexibility, and the ability to confine electromagnetic energy to extremely small volumes. Herein, we demonstrate a photodetector with visible to near-infrared detection range, based on the heterojunction fabricated by van der Waals assembly between few-layer black phosphorus (BP) and few-layer molybdenum disulfide (MoS2). The heterojunction with electrical characteristics which can be electrically tuned by a gate voltage achieves a wide range of…

• NN
  National Natural Science Foundation of China

  Award: 61229401
• RG
  Research Grants Council, University Grants Committee

  Awards: N_CUHK405/12, CUHK1/CRF/12G, T23-407/13-N, AoE/P-03/08
• CU
  Chinese University of Hong Kong