Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe 2 /MoS 2 van der Waals Heterostructures
Shanghai Institute of Technical Physics · Chinese Academy of Sciences · +6 more institutions
Abstract
We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of…
Citation impact
- FWCI
- 28.00
- Percentile
- 100%
- References
- 52
Authors
20- KZKenan ZhangCorresponding
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- TZTianning Zhang
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- GCGuanghui Cheng
Hefei National Center for Physical Sciences at Nanoscale, University of Science and Technology of China
- TLTianxin Li
Chinese Academy of Sciences, Shanghai Institute of Technical Physics
- SWShuxia Wang
Chinese Academy of Sciences, Shanghai Institute of Technical Physics
Topics & keywords
- Heterojunction
- van der Waals force
- Photocurrent
- Kelvin probe force microscope
- Photodetection
- Materials science
- Infrared
- Photoluminescence