Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
Chinese Academy of Sciences · National Center for Nanoscience and Technology · +3 more institutions
Abstract
Band gap engineering of atomically thin two-dimensional (2D) materials is the key to their applications in nanoelectronics, optoelectronics, and photonics. Here, for the first time, we demonstrate that in the 2D system, by alloying two materials with different band gaps (MoS2 and WS2), tunable band gap can be obtained in the 2D alloys (Mo(1-x)W(x)S(2) monolayers, x = 0-1). Atomic-resolution scanning transmission electron microscopy has revealed random arrangement of Mo and W atoms in the Mo(1-x)W(x)S(2) monolayer alloys. Photoluminescence characterization has shown tunable band gap emission continuously tuned from 1.82 eV (reached at x = 0.20) to 1.99 eV (reached at x = 1). Further, density functional theory…
Citation impact
- FWCI
- 23.94
- Percentile
- 100%
- References
- 50
Authors
9- YCYanfeng ChenCorresponding
Chinese Academy of Sciences, National Center for Nanoscience and Technology
- JXJinyang Xi
Tsinghua University
- DDDumitru Dumcenco
National Taiwan University of Science and Technology
- ZLZheng Liu
National Institute of Advanced Industrial Science and Technology
- KSKazu Suenaga
National Institute of Advanced Industrial Science and Technology
Topics & keywords
- Photoluminescence
- Monolayer
- Materials science
- Band gap
- Nanoelectronics
- Direct and indirect band gaps
- Optoelectronics
- Electronic band structure