The Origin of Slow Carrier Transport in BiVO 4 Thin Film Photoanodes: A Time-Resolved Microwave Conductivity Study
Delft University of Technology · Helmholtz-Zentrum Berlin für Materialien und Energie
Abstract
We unravel for the first time the origin of the poor carrier transport properties of BiVO4, a promising metal oxide photoanode for solar water splitting. Time-resolved microwave conductivity (TRMC) measurements reveal an (extrapolated) carrier mobility of ∼4 × 10–2 cm2 V–1 s–1 for undoped BiVO4 under ∼1 sun illumination conditions, which is unusually low for a photoanode material. The poor carrier mobility is compensated by an unexpectedly long carrier lifetime of 40 ns. This translates to a relatively long diffusion length of 70 nm, consistent with the high quantum efficiencies reported for BiVO4 photoanodes. Tungsten (W) doping is found to strongly decrease the carrier mobility by introducing…
Citation impact
- FWCI
- 11.98
- Percentile
- 100%
- References
- 42
Authors
5Topics & keywords
- Conductivity
- Materials science
- Microwave
- Electron mobility
- Doping
- Carrier lifetime
- Optoelectronics
- Diffusion
- Clean water and sanitation