Shape Evolution of Monolayer MoS 2 Crystals Grown by Chemical Vapor Deposition
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Abstract
Atmospheric-pressure chemical vapor deposition (CVD) is used to grow monolayer MoS2 two-dimensional crystals at elevated temperatures on silicon substrates with a 300 nm oxide layer. Our CVD reaction is hydrogen free, with the sulfur precursor placed in a furnace separate from the MoO3 precursor to individually control their heating profiles and provide greater flexibility in the growth recipe. We intentionally establish a sharp gradient of MoO3 precursor concentration on the growth substrate to explore its sensitivity to the resultant MoS2 domain growth within a relatively uniform temperature range. We find that the shape of MoS2 domains is highly dependent upon the spatial location on the silicon substrate,…
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7Topics & keywords
Topics
Keywords
- Chemical vapor deposition
- Monolayer
- Substrate (aquarium)
- Nucleation
- Silicon
- Materials science
- Chemical engineering
- Deposition (geology)
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