articleNano LettersMay 9, 2013Closed access

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

Oak Ridge National Laboratory · Vanderbilt University · +2 more institutions

Indexed incrossref

Abstract

Monolayer molybdenum disulfide (MoS2) is a two-dimensional direct band gap semiconductor with unique mechanical, electronic, optical, and chemical properties that can be utilized for novel nanoelectronics and optoelectronics devices. The performance of these devices strongly depends on the quality and defect morphology of the MoS2 layers. Here we provide a systematic study of intrinsic structural defects in chemical vapor phase grown monolayer MoS2, including point defects, dislocations, grain boundaries, and edges, via direct atomic resolution imaging, and explore their energy landscape and electronic properties using first-principles calculations. A rich variety of point defects and dislocation cores,…

Citation impact

2,175
total citations
FWCI
56.01
Percentile
100%
References
42
Citations per year

Authors

10

Topics & keywords

Keywords
  • Molybdenum disulfide
  • Monolayer
  • Materials science
  • Nanoelectronics
  • Grain boundary
  • Nanotechnology
  • Chemical physics
  • Crystallographic defect
UN Sustainable Development Goals
  • Affordable and clean energy
No related works found for this paper.