Vacancy-Induced Ferromagnetism of MoS 2 Nanosheets
National Synchrotron Radiation Laboratory · University of Science and Technology of China · +2 more institutions
Abstract
Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo(4+) 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 μB/Mo by the…
Citation impact
- FWCI
- 25.83
- Percentile
- 100%
- References
- 42
Authors
12- LCLiang CaiCorresponding
National Synchrotron Radiation Laboratory, University of Science and Technology of China
- JHJingfu He
University of Science and Technology of China, National Synchrotron Radiation Laboratory
- QLQinghua Liu
University of Science and Technology of China, National Synchrotron Radiation Laboratory
- TYTao Yao
University of Science and Technology of China, National Synchrotron Radiation Laboratory
- LCLin Chen
University of Science and Technology of China, National Synchrotron Radiation Laboratory
Topics & keywords
- Nanosheet
- Ferromagnetism
- Vacancy defect
- Chemistry
- Band gap
- Hydrothermal circulation
- Semiconductor
- Phase (matter)
- Affordable and clean energy