Two-Step Growth of Two-Dimensional WSe 2 /MoSe 2 Heterostructures

Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe2 was synthesized first and followed by an epitaxial growth of WSe2 on the edge and on the top surface of MoSe2. Compared to previously reported one-step growth methods, this…

• UD
  U.S. Department of Energy
• SR
  Semiconductor Research Corporation
• MA
  Microelectronics Advanced Research Corporation
• DA
  Defense Advanced Research Projects Agency
• OO
  Office of Science
• MU
  Multidisciplinary University Research Initiative
• OO
  Office of Naval Research

  Award: N000014-09-1-1066
• BE
  Basic Energy Sciences
• AR
  Army Research Office

  Awards: W911NF-11-1-0362, W911NF, W911NF-11
• OR
  Oak Ridge National Laboratory