articleSemiconductor Science and TechnologyMay 16, 2016HYBRID OA

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

DIDaniele Ielmini

Politecnico di Milano

Indexed incrossref

Abstract

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven computation. Among the emerging memories, resistive switching memory (RRAM) raises strong interest due to its high speed, high density as a result of its simple two-terminal structure, and low cost of fabrication. The scaling projection of RRAM, however, requires a detailed understanding of switching mechanisms and there are potential reliability concerns regarding small device sizes. This work provides an overview of the current understanding of bipolarswitching RRAM operation, reliability and scaling. After reviewing the…

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Topics & keywords

Topics
Keywords
  • Resistive random-access memory
  • Scaling
  • Reliability (semiconductor)
  • Scalability
  • Computer science
  • Memristor
  • Fabrication
  • Non-volatile memory
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