3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga 2 O 3 MOSFETs

A Sn-doped (100) $\beta $ -Ga 2 O 3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) $\beta $ -Ga 2 O 3 substrate. Ga 2 O 3 -based metal–oxide–semiconductor field-effect transistors with a 2- $\mu \text{m}$ gate length ( $L_{G})$ , 3.4- $\mu \text{m}$ source–drain spacing ( $L_{\textrm {SD}})$ , and 0.6- $\mu \text{m}$ gate–drain spacing ( $L_{\textrm {GD}})$ were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the OFF-state. The gate-to-drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical…

• AF
  Air Force Research Laboratory