Carrier trapping and recombination: the role of defect physics in enhancing the open circuit voltage of metal halide perovskite solar cells
Italian Institute of Technology · Center for Nano Science and Technology · +5 more institutions
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Abstract
We show that trapped electrons recombine with free holes unexpectedly slowly, on microsecond time scales, relaxing the limit on obtainable open circuit voltage.
Citation impact
520
total citations
- FWCI
- 34.22
- Percentile
- 100%
- References
- 43
Citations per year
Authors
9- TLTomas LeijtensCorresponding
Italian Institute of Technology, Center for Nano Science and Technology, Mylan (Switzerland), Stanford University
- GEGiles E. Eperon
Clarendon College, University of Oxford, Science Oxford
- AJAlex J. Barker
Italian Institute of Technology, Center for Nano Science and Technology, Mylan (Switzerland)
- GGGiulia Grancini
Italian Institute of Technology, Center for Nano Science and Technology, Mylan (Switzerland)
- WZWei Zhang
Clarendon College, University of Oxford, Science Oxford
Topics & keywords
Topics
Keywords
- Perovskite (structure)
- Halide
- Trapping
- Open-circuit voltage
- Recombination
- Metal
- Materials science
- Optoelectronics
UN Sustainable Development Goals
- Affordable and clean energy
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